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| SHINDENGEN Schottky Rectifiers (SBD) Single D3FS4A 40V 2.6A FEATURES *oe Small SMT *oe Tj150*Z *oe Low VF=0.45V *oe PRRSM avalanche guaranteed APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication OUTLINE DIMENSIONS Case : 2F Unit : mm RATINGS *oeAbsolute Maximum Ratings (If not specified Tl=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage V 40 V RM Repetitive Peak Surge Reverse RRSM VVoltage width 0.5ms, duty 1/40 Pulse 45 V Average Rectified Forward Current50Hz sine wave, R-load Ta=34*Z* On alumina substrate IO @ 2.6 A 50Hz sine wave, R-load Ta=30*Z* On glass-epoxy substrate @ 1.9 Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125*Z 150 A Repetitive Peak Surge ReverseRRSM P Power Pulse width 10Es, Tj=25*Z 330 W *oeElectrical Characteristics (If not specified Tl=25*Z) Item Symbol Conditions Ratings Unit Forward Voltage VF I =2.6A, Pulse measurement Max.0.45 V F Reverse Current I Max.5 mA R V=V , R RM Pulse measurement Junction Capacitance =10V Cj f=1MHz,R V Typ.340 pF AEjl junction to lead Max.23 Thermal Resistance AEja junction to ambient*@On alumina substrate Max.80 *Z/W junction to ambient*@On glass-epoxy substrate Max.115 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd D3FS4A Forward Voltage 10 Forward Current IF [A] Tl=150C [MAX] Tl=150C [TYP] Tl=25C [MAX] Tl=25C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 Forward Voltage VF [V] D3FS4A Junction Capacitance f=1MHz Tl=25C TYP per diode 1000 Junction Capacitance Cj [pF] 100 0.1 1 10 Reverse Voltage VR [V] D3FS4A 1000 Reverse Current Tl=150C [MAX] 100 Tl=150C [TYP] Reverse Current IR [mA] Tl=125C [TYP] 10 Tl=100C [TYP] 1 Tl=75C [TYP] 0.1 Pulse measurement per diode 0.01 0 5 10 15 20 25 30 35 40 Reverse Voltage VR [V] D3FS4A 14 Reverse Power Dissipation Reverse Power Dissipation PR [W] 12 10 DC D=0.05 0.1 0.2 8 0.3 6 0.5 4 SIN 2 0.8 0 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T D3FS4A 2 Forward Power Dissipation DC D=0.8 Forward Power Dissipation PF [W] 0.5 1.5 0.2 0.1 0.05 1 SIN 0.3 0.5 0 0 1 2 3 4 5 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T D3FS4A 5 Derating Curve Alumina substrate Average Rectified Forward Current IO [A] DC 4 D=0.8 3 0.5 SIN 0.3 2 0.2 0.1 1 0.05 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = 10V IO 0 0 VR tp D=tp /T T D3FS4A 4 Derating Curve Glass-epoxy substrate Average Rectified Forward Current IO [A] 3.5 3 2.5 0.5 2 1.5 1 0.5 0.05 0 0 20 40 60 80 100 120 140 160 0.3 0.2 0.1 SIN DC D=0.8 Ambient Temperature Ta [C] VR = 10V 0 0 IO VR tp D=tp /T T D3FS4A 200 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 150 non-repetitive, sine wave, Tj=125C before surge current is applied 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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